Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE
| Autor: | Akira Kusaba, Hiroshi Amano, Kenji Shiraishi, Yoshihiro Kangawa, Pawel Kempisty, Shugo Nitta |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
010405 organic chemistry business.industry Vapor phase Crystal growth General Chemistry 010402 general chemistry Condensed Matter Physics Epitaxy 01 natural sciences 0104 chemical sciences Condensed Matter::Materials Science Semiconductor Condensed Matter::Superconductivity Unintentional doping Compound semiconductor Optoelectronics General Materials Science Metalorganic vapour phase epitaxy business |
| Zdroj: | Crystal Growth & Design. 21:1878-1890 |
| ISSN: | 1528-7505 1528-7483 |
| DOI: | 10.1021/acs.cgd.0c01564 |
| Popis: | To improve the properties of semiconductors, it is necessary to construct an integrated crystal growth model that covers all elementary processes of metal–organic vapor phase epitaxy (MOVPE). Altho... |
| Databáze: | OpenAIRE |
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