Current flow through metal shunts in ohmic contacts to n +-Si
| Autor: | Alexander Belyaev, A. O. Vinogradov, T. V. Petlitskaya, A. V. Sachenko, R. V. Konakova, Ya. Ya. Kudryk, V. N. Sheremet, V. A. Anischik, V. A. Pilipenko, N. S. Boltovets |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Contact resistance Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metal symbols.namesake Torr visual_art symbols visual_art.visual_art_medium Vacuum chamber Nanoscopic scale Electrical conductor Ohmic contact Debye length |
| Zdroj: | Semiconductors. 48:492-496 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | It is experimentally found that an ohmic contact based on Au-Pt-Ti-Pd-n + �Si metallization is formed due to nanoscale metal shunts containing Si, Au, and Pt in the region of the interface with n + �Si, which appears during heat treatment at T = 450°C for 10 min in a vacuum chamber with a residual pressure of 10 -6 Torr. The high density of shunts adjoining dislocations and other imperfections is confirmed by the temperature dependence of the specific contact resistance ρ c (T). The density of conductive dislocations, cal� culated from the temperature dependence of ρc is ~5 × 10 9 cm -2 which correlates with the density of struc� tural defects, determined by the etch pits after removal of the metallization layers. |
| Databáze: | OpenAIRE |
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