Electroluminescence in rare-earth doped n-InSe crystal promising for optoelectronics
| Autor: | R. F. Babayeva, T. G. Naghiyev |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Modern Physics Letters B. |
| ISSN: | 1793-6640 0217-9849 |
| DOI: | 10.1142/s0217984923500586 |
| Popis: | n-InSe single crystals were grown by the Bridgman method. Electroluminescence in undoped and rare-earth-doped (Dy and Er) crystals has been experimentally studied. It has been established that in both groups of crystals, electroluminescence is observed at [Formula: see text] 160–165[Formula: see text]K in the wavelength range [Formula: see text]–1.150[Formula: see text][Formula: see text]m, regardless of the values of initial dark resistivity ([Formula: see text]) and concentration ([Formula: see text]). The volt-brightness characteristics and the dependence of brightness on the current strength have been investigated. It was found that the brightness also depends on the values of initial dark resistivity and concentration of the impurities. The highest luminescence brightness and the most stable and reproducible characteristics of electroluminescence are observed in doped crystals. The features of electroluminescence in undoped and rare-earth-doped crystals obey the criteria of theoretical concepts developed for spatially homogeneous crystalline semiconductors. All experiments were comparatively performed for both undoped and rare-earth-doped crystals. |
| Databáze: | OpenAIRE |
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