Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides
| Autor: | Jong-In Shim, Jong Hak Kim, Chan-Hyoung Oh, Seungmin Lee, Euijoon Yoon, Yongjo Park |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention law 0103 physical sciences Stress relaxation Sapphire Optoelectronics Quantum efficiency Wafer Thin film 0210 nano-technology business Light-emitting diode Diode |
| Zdroj: | Journal of the Korean Physical Society. 75:480-484 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.75.480 |
| Popis: | In this study, less bowed light-emitting diodes (LEDs) were fabricated by preparing a LED structure on a sapphire substrate with a SiO2 thin film on its back side. The SiO2 thin film with a low thermal expansion coefficient reduced the bow of the wafer generated by the thermal expansion coefficient difference. As the thickness of SiO2 was increased from 1 µm to 4 µm, the compressive stress in the GaN film was reduced from 16% to 62% with respect to that without SiO2 thin film. The stress reduction in multiple quantum wells also enhanced the internal quantum efficiency of the LED by reducing the piezoelectric field. |
| Databáze: | OpenAIRE |
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