A configurable CMOS memory platform for 3D-integrated memristors
| Autor: | Kwang-Ting Cheng, Dmitri B. Strukov, Advait Madhavan, Amirali Ghofrani, Luke Theogarajan, Melika Payvand, Miguel Angel Lastras-Montano, Justin Rofeh |
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| Rok vydání: | 2015 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
business.industry Computer science Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Integrated circuit design Memristor Resistive random-access memory law.invention Memistor CMOS Neuromorphic engineering law Logic gate Hardware_INTEGRATEDCIRCUITS Electronic engineering business |
| Zdroj: | ISCAS |
| DOI: | 10.1109/iscas.2015.7168899 |
| Popis: | Memristors are emerging as powerful nanoscale devices for diverse applications, such as high-density memories and neuromorphic applications. However, this nascent technology requires considerable advancement before this vision is realized. We present a highly configurable CMOS interface chip which enables the characterization of on-chip memristors, especially for memory applications. The chip was fabricated in On-Semi 3M2P 0.5 μm occupying 2×2 mm2. The chip design allows for post-CMOS fabrication of memristors. The interface between the memristor and the CMOS circuitry was provided via a top metal contact. The chip was designed to support an area-distributed interface decoupling CMOS pitch and memristor pitch, enabling high-density memristor integration. Measurement results on post-CMOS fabricated Ag/SiO 2 /Pt memristive devices are reported. Though we have shown the results from one memristive material stack, thorough chip characterization demonstrates the versatility of the chip enabling its use with a wide variety of materials stacks. |
| Databáze: | OpenAIRE |
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