Analysis of signal integrity(SI) robustness in through-silicon interposer (TSI) interconnects

Autor:	Guruprasad Katti, Roshan Weerasekera, Joseph Romen Cubillo
Rok vydání:	2012
Předmět:	Resistive touchscreen Interconnection Materials science Silicon business.industry chemistry.chemical_element Fine pitch Silicon interposer chemistry Robustness (computer science) Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Parasitic extraction Signal integrity business
Zdroj:	2012 IEEE 14th Electronics Packaging Technology Conference (EPTC).
DOI:	10.1109/eptc.2012.6507115
Popis:	This paper describes the electrical characteristics of the fine pitch interconnects in silicon carrier systems. The characteristics of such interconnects are explored and a typical FPGA-memory system is compared viz-a-viz with a traditional PCB system from low data rates to higher data rates. Our case-study shows that even though highly resistive wires are used in silicon carrier the interconnects are SI robust due to the shorter die to die interconnect length and the absence of package parasitics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::86f99fe76528f36cfbd8e4ceda574b22 https://doi.org/10.1109/eptc.2012.6507115 Zobrazit plný text záznamu