Deposition profile of Ti film inside a trench and its correlation with gas-phase ionization in high-pressure magnetron sputtering

Autor:	Koichi Sasaki, Noriharu Takada, Nayan Nafarizal, Y. Sago, Keiji Nakamura
Rok vydání:	2006
Předmět:	Degree of ionization Surface coating Materials science Sputtering Ionization Analytical chemistry Deposition (phase transition) Surfaces and Interfaces Substrate (electronics) Thin film Sputter deposition Condensed Matter Physics Surfaces Coatings and Films
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:2206-2211
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.2363999
Popis:	This article reports the relationship between the degree of ionization of Ti in the gas phase and the thickness profile of Ti film inside a trench in magnetron sputtering deposition. A conventional magnetron sputtering plasma source was used for depositing Ti films inside trenches formed on rf-biased SiO2 substrates. It was found that a high bottom coverage was obtained when a high gas pressure and a long distance between the target and the substrate were employed for the deposition. On the other hand, at a short distance between the target and the substrate, the bottom coverage was small and was almost independent of the gas pressure. The deposition profile was compared with the spatial distributions of Ti and Ti+ densities measured by laser-induced fluorescence (LIF) imaging spectroscopy. The LIF results revealed that the density ratio of Ti+ to Ti in the downstream region increased with the gas pressure up to 0.3, while in the upstream region, it was small (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::86b5aba7a155fc4cb8375a3d2da4a134 https://doi.org/10.1116/1.2363999 Zobrazit plný text záznamu