Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes

Autor:	Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara
Rok vydání:	2011
Předmět:	Engineering business.industry Isolator High-electron-mobility transistor Electronic Optical and Magnetic Materials Extremely high frequency Electronic engineering Tunnel diode Insertion loss Optoelectronics Electrical and Electronic Engineering Wideband business Quantum tunnelling Diode
Zdroj:	IEICE Transactions on Electronics. :820-825
ISSN:	1745-1353 0916-8524
Popis:	Tunnel diodes are some of 2-port devices with negative differential resistance (NDR). In this paper, we propose a low insertion loss isolator, which can be designed to operate up to sub-millimeter region, by using resonant tunneling diodes (RTDs) and a HEMT. Small-signal analyses are performed to confirm insertion loss and unidirectional characteristics for the proposed active isolator. It is found that unidirectional amplifications as well as isolation characteristics could be expected below sub-millimeter waveband as a result of numerical calculations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::866b55a947f2894f954a2645fc11b771 https://doi.org/10.1587/transele.e94.c.820 Zobrazit plný text záznamu