| Autor: |
Yan Mei Miao, Shu Kang Deng, Rui Ting Hao, Jie Guo, Ying Qiang Xu, Ying Liu |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. 787:143-147 |
| ISSN: |
1662-8985 |
| Popis: |
Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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