Highly efficient near ultraviolet LEDs using InGaN/GaN/AlxGa1-xN/GaN multiple quantum wells at high temperature on sapphire substrate

Autor:	Mohd Ann Amirul Zulffiqal Md Sahar, Zainuriah Hassan, Sha Shiong Ng, Nur Atiqah Hamzah
Rok vydání:	2023
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics
Zdroj:	Materials Science in Semiconductor Processing. 156:107298
ISSN:	1369-8001
DOI:	10.1016/j.mssp.2022.107298
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8623b8c554dd321439560718e41beeae https://doi.org/10.1016/j.mssp.2022.107298 Zobrazit plný text záznamu Full Text from ScienceDirect