Power hysteresis and waveguide bistability of stripe quantum-well InGaAs/GaAs/GaAlAs heterolasers with a strained active layer
| Autor: | Juergen Sebastian, G. Beister, J. Maege, I V Akimova, G. Erbert, A.E. Drakin, P G Eliseev |
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| Rok vydání: | 1995 |
| Předmět: |
Waveguide (electromagnetism)
Materials science Bistability business.industry Physics::Optics Statistical and Nonlinear Physics Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Active layer law.invention Hysteresis law Optoelectronics Electrical and Electronic Engineering business Lasing threshold Quantum well Diode |
| Zdroj: | Quantum Electronics. 25:291-301 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qe1995v025n04abeh000349 |
| Popis: | A study was made of quantum-well injection lasers with a strained active InGaAs layer, emitting at 980 nm. At room temperature the minimum threshold current density for a layer 6–7 nm thick was 120 A cm-2 in a cavity 540 μm long. Phenomena which accompanied the disappearance of the index-guiding lateral confinement because of the 'anti-index-guiding' influence of excess carriers were studied in stripe laser diodes of the ridge-wave-guide type. These phenomena included collapse and bistability of lasing, power hysteresis, and changes in the angular distribution. Calculations were made of the mode gain in ridge-waveguide lasers with different geometric parameters and as a function of the excess carrier density. It was found that the mode gain could have a maximum and then fall significantly on increase in the pumping rate, which was used to account for the collapse of lasing and for the power hysteresis. |
| Databáze: | OpenAIRE |
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