Formation and interaction of dislocation-induced and vicinal monatomic steps on a GaAs(001) surface under stress relaxation
| Autor: | D M Kazantsev, E. E. Rodyakina, I.O. Akhundov, N.S. Rudaya, V.L. Alperovich, Alexander V. Latyshev |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annihilation Condensed matter physics Annealing (metallurgy) Mechanical Engineering Metals and Alloys Heterojunction 02 engineering and technology Slip (materials science) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Condensed Matter::Materials Science Transverse plane Monatomic ion Mechanics of Materials 0103 physical sciences Stress relaxation General Materials Science 0210 nano-technology Vicinal |
| Zdroj: | Scripta Materialia. 114:125-128 |
| ISSN: | 1359-6462 |
| Popis: | Formation and interaction of curved vicinal and straight dislocation-induced steps of monatomic height on smooth GaAs(001) surface is studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass. Typical dislocation phenomena, like transverse glide, are revealed in the slip steps patterns. At elevated temperatures, slip steps keep their straight shape, while curved vicinal steps acquire distinct small-scale (~ 10 nm) undulations caused, presumably, by kink bunching. Annihilation of steps with opposite signs and anticrossing of slip steps with each other and with vicinal steps are studied. |
| Databáze: | OpenAIRE |
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