Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2: New precursors for chemical vapor deposition processes
| Autor: | E. N. Ermakova, M. G. Voronkov, I. P. Tsyrendorzhieva, A. V. Lis, V. I. Rakhlin, L. D. Nikulina, Marina Kosinova, Sergey V. Sysoev |
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| Rok vydání: | 2013 |
| Předmět: |
Hybrid physical-chemical vapor deposition
Vapor pressure Chemistry General Chemical Engineering Inorganic chemistry Metals and Alloys Chemical vapor deposition Combustion chemical vapor deposition Inorganic Chemistry chemistry.chemical_compound Vaporization Materials Chemistry Thermal stability Thermal analysis Organosilicon |
| Zdroj: | Inorganic Materials. 49:363-367 |
| ISSN: | 1608-3172 0020-1685 |
| Popis: | We have synthesized the germanium- and tin-containing organosilicon compounds Et3GeN(SiMe3)2 and Et3SnN(SiMe3)2 as new precursors for the preparation of materials by chemical vapor deposition. The compounds were characterized by NMR, IR and UV spectroscopies and thermal analysis. Using vapor pressure measurements, we obtained temperature dependences of their saturated vapor pressure. We assessed their thermal stability and calculated the thermodynamic characteristics of vaporization of the organosilicon compounds. |
| Databáze: | OpenAIRE |
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