The causes of emitting-power instability in GaP:N LED
| Autor: | O.D. Smijan, T.G. Berdinskikh, T.V. Torchinskaya |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
business.industry
Annealing (metallurgy) Binary compound Effective radiated power Electroluminescence Condensed Matter Physics Instability Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Luminous flux chemistry.chemical_compound Optics chemistry law Secondary emission Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality business Light-emitting diode |
| Zdroj: | Microelectronics Reliability. 34:135-139 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/0026-2714(94)90482-0 |
| Popis: | A complex study of injection-enhanced processes in GaP:N light emitting diodes under forward bias (I = 5–30 mA) during the first 2–5 min has been carried out. The electrical, electroluminescent methods, DLTS technique and the method of secondary emission mass spectroscopy have been used. It has been shown that the instability of luminous power of GaP:N LEDs is associated with recombination-enhanced annealing defects in the active region of devices, rather than processes at the contacts. It has been found, that stable LEDs have a significantly higher concentration of O, C and their compounds. A reliable physical model of the processes involved is proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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