Shallow acceptors in GaAs grown from the vapour phase

Autor:	David C. Look, Donald C. Reynolds, G. L. McCoy, B. Jogai
Rok vydání:	1997
Předmět:	Photoluminescence Chemistry Binding energy Inorganic chemistry Condensed Matter Physics Acceptor Gallium arsenide Crystallography chemistry.chemical_compound Excited state Phase (matter) Indium phosphide General Materials Science Luminescence
Zdroj:	Journal of Physics: Condensed Matter. 9:10795-10799
ISSN:	1361-648X 0953-8984
DOI:	10.1088/0953-8984/9/48/021
Popis:	The photoluminescent spectra from high-quality GaAs crystals grown from the vapour phase reveal a dominant Zn acceptor and a C acceptor, as well as an acceptor that would appear to have a smaller binding energy than C. We show that this shallowest acceptor is not a discrete chemical acceptor, having a smaller binding energy than C, but is rather due to a complex centre.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::81975a1be7fccdbd6ac43247b7a17d05 https://doi.org/10.1088/0953-8984/9/48/021 Zobrazit plný text záznamu