Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy

Autor: J.S. Rojas-Ramirez, Manuel Caro, Susmita Ghose, Abraham Arias, Nicola Nedev, Ravi Droopad, Md. Shafiqur Rahman
Rok vydání: 2016
Předmět:
Zdroj: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 34:02L109
ISSN: 2166-2754
2166-2746
DOI: 10.1116/1.4942045
Popis: Epitaxial beta-gallium oxide (β-Ga2O3) has been deposited on c-plane sapphire by plasma-assisted molecular-beam epitaxy technique using two methods. One method relied on a compound Ga2O3 source with oxygen plasma while the second used elemental Ga source with oxygen plasma. A side-by-side comparison of the growth parameters between these two methods has been demonstrated. With various substrate temperatures, pure phase (2¯01) oriented β-Ga2O3 thin films were obtained using both sources. Reflection high energy electron diffraction patterns displayed a threefold reconstruction during the growth. X-ray photoelectron spectroscopy analysis showed a shift in the binding energy of the Ga 2p peaks consistent with a Ga being in a +3 oxidation state. For transparent oxide like β-Ga2O3, it is important to determine the index of refraction (n) and its functional dependence on the wavelength. The Cauchy dispersion relation was employed to evaluate the refractive index, film thickness, roughness values, and extinction ...
Databáze: OpenAIRE