Recent application of silicon carbide to high power microwave

Autor:	C.D. Brandt, J.J. Hawkins, A.W. Morse, R.R. Barron, J.A. Ostop, T.J. Smith, S. Sriram, P.M. Esker, Rowland C. Clarke, R.R. Siergiej, C.D. Davis, L.-S. Chen
Rok vydání:	2002
Předmět:	Materials science Silicon business.industry Hybrid silicon laser Wide-bandgap semiconductor Silicon on insulator chemistry.chemical_element chemistry.chemical_compound chemistry Silicon carbide Optoelectronics MESFET Power semiconductor device Silicon bandgap temperature sensor business
Zdroj:	1997 IEEE MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1997.604519
Popis:	Silicon carbide is emerging semiconductor material which is now proven to be especially well suited for high power, high frequency applications. Recent results verify the superiority of silicon carbide over both silicon or gallium arsenide for fabrication of high power transistors from DC through X-band. A silicon carbide UHF television module has demonstrated good signal fidelity at the 2000 W PEP level. S-band transistors show well over 200 watts peak for radar applications, and over 6 W has been obtained at X-band in a silicon carbide MESFET.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8004aff2e52bddf7d6fe37c025e1c0f3 https://doi.org/10.1109/mwsym.1997.604519 Zobrazit plný text záznamu