Suppression of self-heating in nanoscale interfaces using h-BN based anisotropic heat diffuser
| Autor: | Arman Kadirov, Dasom Jeon, Yongsu Choi, Junho Bae, Jinho Lim, Seunghyun Lee |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Convection
Materials science Mean free path business.industry Transistor General Physics and Astronomy 02 engineering and technology Surfaces and Interfaces General Chemistry Heat transfer coefficient Integrated circuit 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Thermal conduction 01 natural sciences 0104 chemical sciences Surfaces Coatings and Films law.invention Thermal radiation law Optoelectronics 0210 nano-technology business Power density |
| Zdroj: | Applied Surface Science. 543:148801 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2020.148801 |
| Popis: | Thermal management of integrated circuits (ICs) is becoming increasingly important as the feature-size of transistors is now comparable to the phonon mean free path, and the power density is reaching a critical level. The thermal effect is especially pronounced in 3D ICs with limited heat dissipation paths due to stacked transistors with insulators interposed between them. Hexagonal boron nitride (h-BN) is an insulating 2D material with a strong anisotropy in its heat-conducting property; the heat transfer coefficient is very high in the lateral direction, rivaling that of copper, but relatively low in the vertical direction. In this work, we studied the heat dissipation efficiency of integrated h-BN gate dielectrics with varying thicknesses in an environment similar to that of a stacked IC. High-power GaN transistors were interposed between thick insulators to emulate the hotspot propagation in a confined environment with minimized convective and radiative heat transfer. Devices were compared via in situ thermographic imaging, and at least a 20 K decrease in hotspot temperature was observed at the power density of 10 to 12.5 Wmm−1. Importantly, the drain current which was suppressed due to the self-heating effect was restored to its normal level after the heat conduction rate increased. |
| Databáze: | OpenAIRE |
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