Suppressed Degradation and Enhanced Performance of CsPbI3 Perovskite Quantum Dot Solar Cells via Engineering of Electron Transport Layers
| Autor: | Jiwoo Min, Taiho Park, Sunhee Yun, Jung Yeon Kim, Jongmin Choi, Young-Ill Kim, Seyoung Lim, Jong-Deok Park |
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| Rok vydání: | 2021 |
| Předmět: |
Photocurrent
Materials science Open-circuit voltage business.industry Energy conversion efficiency 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Quantum dot Photovoltaics Photocatalysis Optoelectronics Degradation (geology) General Materials Science 0210 nano-technology business Perovskite (structure) |
| Zdroj: | ACS Applied Materials & Interfaces. 13:6119-6129 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.0c15484 |
| Popis: | CsPbI3 perovskite quantum dots (CsPbI3-PQDs) have recently come into focus as a light-harvesting material that can act as a platform through which to combine the material advantages of both perovskites and QDs. However, the low cubic-phase stability of CsPbI3-PQDs in ambient conditions has been recognized as a factor that inhibits device stability. TiO2 nanoparticles are the most regularly used materials as an electron transport layer (ETL) in CsPbI3-PQD photovoltaics; however, we found that TiO2 can facilitate the cubic-phase degradation of CsPbI3-PQDs due to its vigorous photocatalytic activity. To address these issues, we have developed chloride-passivated SnO2 QDs (Cl@SnO2 QDs), which have low photocatalytic activity and few surface traps, to suppress the cubic-phase degradation of CsPbI3-PQDs. Given these advantages, the CsPbI3-PQD solar cells based on Cl@SnO2 ETLs show significantly improved device operational stability (under conditions of 50% relative humidity and 1-sun illumination), compared to those based on TiO2 ETLs. In addition, the Cl@SnO2-based devices showed improved open circuit voltage and photocurrent density, resulting in enhanced power conversion efficiency (PCE) up to 14.5% compared to that of TiO2-based control devices (PCE of 13.8%). |
| Databáze: | OpenAIRE |
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