Minority carrier diffusion length and edge surface-recombination velocity in InP

Autor:	Sheila G. Bailey, Roshanak Hakimzadeh
Rok vydání:	2002
Předmět:	chemistry.chemical_compound Surface conductivity Materials science chemistry Scanning electron microscope Schottky barrier Indium phosphide Charge carrier Electron Carrier lifetime Diffusion (business) Atomic physics
Zdroj:	1993 (5th) International Conference on Indium Phosphide and Related Materials.
DOI:	10.1109/iciprm.1993.380613
Popis:	A scanning electron microscope was used to obtain electron-beam-induced current (EBIC) profiles in InP specimens containing a Schottky barrier perpendicular to the scanned edge surface. An independent technique was used to measure the edge surface-recombination velocity (V/sub s/). These values were used in a fit of the experimental EBIC data with a theoretical expression for normalized EBIC (C. Donolato, 1982) to obtain the electron minority carrier diffusion length (L/sub n/). >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ee46234065cc0187af40264a7aa22ef https://doi.org/10.1109/iciprm.1993.380613 Zobrazit plný text záznamu