Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields
| Autor: | Dariusz Kaczorowski, M. P. Mikhailova, V. A. Berezovets, K. D. Moiseev, R. V. Parfeniev, V. I. Nizhankovskii, N. S. Averkiev |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Magnetic moment Condensed matter physics Energy level splitting Fermi level Heterojunction Landau quantization Quantum Hall effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science symbols.namesake symbols Condensed Matter::Strongly Correlated Electrons Spin (physics) Quantum well |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 321:712-715 |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2008.11.032 |
| Popis: | We report a study of spin-related magnetotransport properties of a type II broken-gap heterostructure formed by InAs substrate bulky doped with Mn and δ-Mn-doped GaInAsSb epilayer. Planar and vertical quantum magnetotransport in a 2D-electron–hole system at the single type II broken-gap InAs/GaInAsSb heterointerface was investigated in high magnetic fields under the quantum Hall regime up to 15 T at low temperature ( T =1.5 K). The I – V characteristics near the dielectric phase boundary show the step-like behavior that corresponds to the quantum conductance in a disordered 2D structure through the extended edge states of the nearest Landau level closest to the Fermi level. The value of these steps is determined by the orientation of the 2D-electron spin at the Landau level and the magnetic moment of Mn in the δ-layer. |
| Databáze: | OpenAIRE |
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