Formation of porous silicon on N-type Si (1 0 0) and Si (1 1 1) substrates by electrochemical anodization method
| Autor: | E. Prayogo, I. Syahidi, Risa Suryana, Kuwat Triyana, Heru Susanto, Khairurrijal, B. Pratama |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Anodizing Analytical chemistry 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Porous silicon 01 natural sciences law.invention Dye-sensitized solar cell law 0103 physical sciences Solar cell Profilometer 0210 nano-technology Spectroscopy Current density |
| Zdroj: | Materials Today: Proceedings. 44:3426-3429 |
| ISSN: | 2214-7853 |
| DOI: | 10.1016/j.matpr.2021.02.832 |
| Popis: | Porous silicon (PSi) was formed on n-type Si (1 0 0) and Si (1 1 1) substrates via the electrochemical anodization method. The samples were anodized in HF: ethanol solution (1:1) and flowed with a varied current density of 10, 20, 30, 40, and 50 mA/cm2 for 30 min. The reflectance, the pores size, and the pores depth of PSi were characterized by UV–Vis spectroscopy, SEM instrument, and Dektak Profilometer, respectively. The higher current density results in lower reflectance of PSi on both Si (1 0 0) and Si (1 1 1) substrates, while SEM images and Dektak tests confirmed that the pore depth and the pore size of PSi increased. It is concluded that PSi could be applied to solar cell devices as an anti-reflective surface. PSi reflectance on Si (1 0 0) is lower than on the Si (1 1 1) substrate. It suggested that in DSSC, PSi on Si (1 0 0) could be considered to have better anti-reflective properties. |
| Databáze: | OpenAIRE |
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