Pressure dependent tailored attributes of silicon nanoneedles grown by VHF plasma technique
| Autor: | Samsudi Sakrani, Supar Rohani, Yasir Hussein Mohammed |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Pressure dependent Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences symbols.namesake Crystallinity chemistry Plasma-enhanced chemical vapor deposition Torr 0103 physical sciences symbols General Materials Science Electrical and Electronic Engineering 0210 nano-technology High-resolution transmission electron microscopy Raman spectroscopy |
| Zdroj: | Superlattices and Microstructures. 94:147-157 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2016.04.021 |
| Popis: | Gold (Au) catalysts assisted well-aligned silicon nanoneedles (SiNNs) are synthesized using very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The tailored morphology and the optical reflectance of such NNs are inspected as a function of varying reactor pressure (200–800 mTorr). FESEM images revealed the growth of high density SiNNs with diameter ranging from 45 to 600 nm and length as much as 5.66 ± 0.2 μm. Overall morphology of these NNs are found to be highly sensitive to the pressure variation, where appreciably aligned thinner NNs are achieved at 600 mTorr pressure. The presence of globule at the NNs tip authenticated their VLS mechanism mediated growth. The reactor pressure sensitivity of the aspect ratio, lattice parameters, Raman modes, and reflectance are demonstrated. XRD patterns manifested SiNNs cubic crystalline phase with preferred orientation along 〈111〉 direction. The occurrence of NNs high crystallinity is further supported by the Raman and HRTEM data. The reflectance of SiNNs grown at 600 mTorr exhibited remarkable reduction (∼6.3%) than those obtained at other pressures. This reactor pressure dependent significant modification in the physical properties of synthesized SiNNs may be prospective for the development of optoelectronics. |
| Databáze: | OpenAIRE |
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