Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
| Autor: | S. G. Shemardov, Yu. Yu. Kuznetsov, P. A. Alexandrov, K. D. Demakov |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Ion beam Silicon business.industry Nanocrystalline silicon chemistry.chemical_element Recrystallization (metallurgy) Strained silicon Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallography Ion implantation chemistry Silicon on sapphire Sapphire Optoelectronics business |
| Zdroj: | Semiconductors. 47:298-300 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782613020036 |
| Popis: | Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90–150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects. |
| Databáze: | OpenAIRE |
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