Polycrystalline heterojunction solar cells: A device perspective

Autor: J. E. Phillips, William N. Shafarman, P. V. Meyers, Robert W. Birkmire, Brian E. McCandless
Rok vydání: 1996
Předmět:
Zdroj: physica status solidi (b). 194:31-39
ISSN: 1521-3951
0370-1972
Popis: Analysis of high efficiency, thin film, small grain, polycrystalline. heterojunction CdTe and CuInSe 2 based solar cells can help explain the high quantum efficiencies and the resulting short circuit current (J SC ) as well as the forward diode current that controls the open circuit voltage (V OC - This analysis shows that minority carrier recombination at the metallurgical interface and at grain boundaries is greatly reduced by the proper doping of the window and absorber layers thereby increasing J SC . Additional analysis and measurements show that the V OC in present state of the art solar cells is controlled by the magnitude of the forward diode current which appears to be caused by recombination in the space charge region of the absorber layer. This also shows that ally quantitative modeling of these devices which relates the device performance to the bulk electronic properties of the material should consider the additional geometric dimension introduced by the polycrystallinity because of grain boundary effects.
Databáze: OpenAIRE
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