| Autor: |
Yang Dabao, L. S. Zhang, Zhao Xiangyang, H. Y. Guo, J. L. Wang, Shixiong Liang, G. D. Gu, Xing Dong, Y. L. Fang, Zhihong Feng |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz). |
| DOI: |
10.1109/irmmw-thz.2015.7327726 |
| Popis: |
The Schottky barrier diodes based on homoepitaxial n-type GaN materials are fabricated for high-power terahertz multiplier applications. The dislocation density of the GaN homoepilayer is estimated to be about 2–3 orders lower than the typical dislocation density of hetero-epitaxial GaN, the defect density and square resistance are also reduced. So, the series resistance of the diodes is decreased. The air-bridge structure and the substrate thinning-down technique were adopted to reduce the parasitic parameters. The cut-off frequency (f c ) is improved to be above 1.2THz at zero bias by this method. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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