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Perforated semiconductor neutron detectors are compact diode detectors that operate at low power and can be fashioned to have high thermal neutron detection efficiency. Fabricated from high-purity Si wafers, the perforations are etched into the diode surface with ICP-RIE and backfilled with 6 LiF neutron reactive material. The intrinsic thermal neutron detection efficiency depends upon many factors, including the perforation geometry, size, and depth. Devices were fabricated from high resistivity 10 kO cm n-type Si with conformal p-type shallow junction diffusions into the perforations, which demonstrate improved neutron detection performance over previous selectively diffused designs. A comparison was made to previous selectively diffused designs, and pulse height spectra show improved signal-to-noise ratio, higher neutron counting efficiency, and excellent gamma-ray discrimination. Devices with 20 ðaverageÞmm wide 100mm deep sinusoidal trenches yielded intrinsic thermal neutron detection efficiencies of 11:9470:078%. |
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