Temperature effects in semiconductor quantum dot lasers
| Autor: | John P. McCaffrey, Yan Feng, A.J. SpringThorpe, Sylvain Charbonneau, Simon Fafard, Karin Hinzer, E. M. Griswold |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Laser diode business.industry Mechanical Engineering Physics::Optics Condensed Matter Physics Semiconductor laser theory law.invention Condensed Matter::Materials Science Mechanics of Materials Quantum dot laser Quantum dot law Optoelectronics General Materials Science Spontaneous emission business Lasing threshold Quantum well Molecular beam epitaxy |
| Zdroj: | Materials Science and Engineering: B. 51:114-117 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(97)00241-9 |
| Popis: | Self-assembled quantum dots (QDs) of highly strained InAlAs have been grown by molecular beam epitaxy (MBE) in separate confinement p-i-n heterostructres on (001) GaAs substrates. At low temperatures, the lasing threshold currents for red-emitting QD lasers are found to be more temperature-independent than for quantum well (QW) lasers. At higher temperatures, the temperature dependence of the threshold currents is governed mainly by the depth of the separate confinement region which was designed to obtain QD lasers capable of room temperature emission with simple broad area laser devices having external efficiencies of ∼13% at low temperatures. |
| Databáze: | OpenAIRE |
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