Tin sulfide thin films and Mo/p-SnS/n-CdS/ZnO heterojunctions for photovoltaic applications
| Autor: | V. A. Ivanov, Vera Lazenka, V.F. Gremenok, Klaus Bente, S. A. Bashkirov |
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| Rok vydání: | 2012 |
| Předmět: |
Auger electron spectroscopy
Materials science Open-circuit voltage business.industry Metals and Alloys Analytical chemistry Heterojunction Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials X-ray crystallography Materials Chemistry Optoelectronics Thin film business Layer (electronics) Short circuit Chemical bath deposition |
| Zdroj: | Thin Solid Films. 520:5807-5810 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2012.04.030 |
| Popis: | Tin sulfide (SnS) is one of the most promising materials for photovoltaics. Here we report on the preparation as well as chemical, structural and physical characterization of the Mo/p-SnS/n-CdS/ZnO heterojunctions. The SnS thin films were grown by hot wall deposition method on the Mo-coated glass substrates at 270–350 °C. The crystal structure and elemental composition were examined by X-ray diffraction and Auger electron spectroscopy methods. The CdS buffer layers were deposited onto the SnS films by chemical bath deposition. The ZnO window layers were deposited by a two step radio frequency magnetron sputtering, resulting in a ZnO bilayer structure: the first layer consists of undoped i-ZnO and the second of Al-doped n-ZnO. The best junctions have an open circuit voltage of 132 mV, a short circuit current density of 3.6 mA/cm 2 , a fill-factor of 0.29 and efficiency up to 0.5%. |
| Databáze: | OpenAIRE |
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