Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon
| Autor: | V. P. Polyanskaya, O. Ya. Belobrovaya, I. T. Yagudin, I. V. Galushka, Viktor V. Galushka, D. V. Terin, V. I. Sidorov, D. I. Bilenko, E. A. Zharkova |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Photon business.industry Bremsstrahlung 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Porous silicon 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Wavelength 0103 physical sciences Optoelectronics Irradiation 0210 nano-technology business Layer (electronics) |
| Zdroj: | Semiconductors. 52:331-334 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782618030077 |
| Popis: | The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed. |
| Databáze: | OpenAIRE |
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