Investigation of oxygen diffusion barrier properties of reactively sputtered iro2 thin films
Autor: | Konrad Samwer, Cay Uwe Pinnow, Igor Kasko, Nicolas Nagel, Franz Jahnel, Ulrich Geyer, Robert Primig, Christine Dehm, Michael Seibt |
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Rok vydání: | 2001 |
Předmět: |
Materials science
Diffusion barrier Diffusion Analytical chemistry chemistry.chemical_element Partial pressure Substrate (electronics) Condensed Matter Physics Microstructure Oxygen Electronic Optical and Magnetic Materials chemistry Control and Systems Engineering Materials Chemistry Ceramics and Composites Texture (crystalline) Electrical and Electronic Engineering Thin film |
Zdroj: | Integrated Ferroelectrics. 37:29-38 |
ISSN: | 1607-8489 1058-4587 |
Popis: | High quality IrO2 films are of great interest as electrodes and oxygen barrier layers for PZT and SBT based integrated non-volatile ferroelectric memories. The investigated IrO2 films were reactively DC-sputtered in an Ar/O2 atmosphere. Generic curves were used for the optimization of the film preparation. The microstructure of the sputtered films was characterized by XRD and it was found that the texture can be adjusted from (110) to (200) by slightly varying the oxygen partial pressure at higher substrate temperatures. This change in microstructure is accompanied by a compositional change from oxygen substoichiometric to oxygen overstoichiometric films. Moreover, the influence of the microstructure on thermal stability and oxygen barrier effectiveness was investigated by SIMS depth profiling using an 18O2 tracer diffusion method. Oxygen diffusion for process-relevant temperatures (550°-765°C) was systematically investigated and for the first time oxygen diffusion coefficients in IrO2 were deter... |
Databáze: | OpenAIRE |
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