Characterization of TiOxNy nanoparticles embedded in HfOxNy as charge trapping nodes for nonvolatile memory device applications
| Autor: | Chien-Wei Liu, Chen-Pang Tsai, Jin-Tsong Jeng, Kuei-Shu Chang-Liao, Chin-Lung Cheng, Bau-Tong Dai |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Oxide Nanoparticle Charge density Nanotechnology Dielectric Trapping Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Non-volatile memory chemistry.chemical_compound chemistry Electrical and Electronic Engineering Thin film High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 86:1692-1695 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2009.03.032 |
| Popis: | Silicon-oxide-nitride-oxide-silicon devices with nanoparticles (NPs) as charge trapping nodes (CTNs) are important to provide enhanced performance for nonvolatile memory devices. To study these topics, the TiO"xN"y metal oxide NPs embedded in the HfO"xN"y high-k dielectric as CTNs of the nonvolatile memory devices were investigated via the thermal synthesis using Ti thin-film oxidized in the mixed O"2/N"2 ambient. Well-isolated TiO"xN"y NPs with a diameter of 5-20nm, a surface density of ~3x10^1^1cm^-^2, and a charge trap density of around 2.33x10^1^2cm^-^2 were demonstrated. The writing characteristic measurements illustrate that the memory effect is mainly due to the hole trapping. |
| Databáze: | OpenAIRE |
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