Effects of Capping and Intrinsic Layers on Current Density in PIN and NIP GaN/InGaN/GaN Solar Cells

Autor:	Luis Zamora-Peredo, Leandro García-González, J. Hernández-Torres, G. Santana-Rodrigez, Máximo López-López, A. Del Ángel-Lara, Gerardo Contreras-Puente, R. Mendoza-Pérez, T. Hernandez-Quiroz, M. Alonso-Rodríguez
Rok vydání:	2013
Předmět:	Materials science business.industry Optoelectronics NIP business Current density
Zdroj:	Energy and Environment Focus. 2:315-319
ISSN:	2326-3040
DOI:	10.1166/eef.2013.1071
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7b4364441488fcea00551cb6085fad18 https://doi.org/10.1166/eef.2013.1071 Zobrazit plný text záznamu