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Among several major challenges posed by generating and accelerating adequate intensities of RIBs, selection of the most appropriate target material is perhaps the most difficult because of the requisite fast and selective thermal release of minute amounts of the short-lived product atoms from the ISOL target in the presence of bulk amounts of target material. Experimental studies are under way at the Oak Ridge National Laboratory (ORNL) which are designed to measure the time evolution of implanted elements diffused from refractory target materials which are candidates for forming radioactive ion beams (RIBs) at the Holifield Radioactive Ion Beam Facility (HRIBF). The diffusion coefficients are derived by comparing experimental data with numerical solutions to a one-dimensional form of Fick`s second law for ion implanted distributions. In this report, we describe the experimental arrangement, experimental procedures, and provide time release data and diffusion coefficients for releasing ion implanted {sup 37}Cl from Zr{sub 5}Si{sub 3} and {sup 75}As, {sup 79}Br, and {sup 78}Se from Zr{sub 5}Ge{sub 3} and estimates of the diffusion coefficients for{sup 35}Cl, {sup 63}Cu, {sup 65}Cu, {sup 69}Ga and {sup 71}Ga diffused from BN; {sup 35}Cl, {sup 63}Cu, {sup 65}Cu, {sup 69}Ga, {sup 75}As, and {sup 78}Se diffused from C;more » {sup 35}Cl, {sup 68}Cu, {sup 69}Ga, {sup 75}As, and {sup 78}Se diffused from Ta.« less |
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