Effects of Area Ratio on the Characteristics of Metal-Ferroelectric-Metal-Insulator-Semiconductor Field-Effect-Transistors (MFMIS FETs)
| Autor: | Lei Cao, Yanping Li, Jing Sun, Xiaorong Shi, Li Tian, Jiaoyun Liu |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
02 engineering and technology 01 natural sciences Capacitance Metal 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 010302 applied physics Series (mathematics) business.industry Multiple integral 021001 nanoscience & nanotechnology Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials Semiconductor Control and Systems Engineering visual_art Ceramics and Composites visual_art.visual_art_medium Area ratio Optoelectronics Field-effect transistor 0210 nano-technology business |
| Zdroj: | Integrated Ferroelectrics. 201:183-191 |
| ISSN: | 1058-4587 |
| DOI: | 10.1080/10584587.2019.1668702 |
| Popis: | The switching physics of ferroelectric, series capacitance theory and Pao and Sah’s double integral are used for describing the polarization-voltage (P-V) characteristic of ferroelectric layer, capacitance-voltage (C-V) characteristic of MFMIS capacitor, and drain current-gate voltage (ID-VGS) and drain current-drain voltage (ID-VDS) characteristics of MFMIS FET. The effects of the area ratio on the P-V, C-V, ID-VGS, and ID-VDS characteristics are discussed. The results indicate that with the increase of the area ratio, the P-V characteristic, memory windows of C-V and ID-VGS characteristics become saturated, while the drain current ON/OFF ratio and applied voltage for saturated memory window decrease. |
| Databáze: | OpenAIRE |
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