Controlled chemical mechanical polishing of polysilicon and silicon dioxide for single-electron device
| Autor: | Gregory L. Snider, Vishwanath Joshi, Alexei O. Orlov |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Silicon Scanning electron microscope chemistry.chemical_element Polishing Nanotechnology Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Resist chemistry Chemical-mechanical planarization Surface roughness Composite material Reactive-ion etching |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 25:1034-1037 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.2433986 |
| Popis: | In this article, the authors report experimental results of the chemical mechanical polishing (CMP) of silicon dioxide (SiO2) and polysilicon to produce nanoscale features with very smooth surfaces. The sizes of the features polished ranged from 30to500nm. For polysilicon polishing, the nanostructures were defined in positive tone e-beam resist and the pattern was transferred to the oxide substrate using reactive ion etching. These etched nanostructures (70nm deep trenches) were conformally filled with low pressure chemical vapor deposited polysilicon and polished using a CMP system. Polishing planarized the sample and removed the polysilicon overburden to expose the filled trenches in the SiO2. The polished structures were studied using scanning electron microscopy (cross sections) and atomic force microscopy (surface). The authors report controllable CMP to realize ∼20nm thick layers after polishing, with rms roughness of ∼0.3nm. Better control of the CMP process (few nm/min removal rate) was demonstrat... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|