Atomic layer deposition of carbon doped silicon oxide by precursor design and process tuning
| Autor: | Anupama Mallikarjunan, Kirk Scott Cuthill, Meiliang Wang, Manchao Xiao, Xinjian Lei, Haripin Chandra |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Dimethylsilane Materials science technology industry and agriculture chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films chemistry.chemical_compound Atomic layer deposition Chemical engineering chemistry X-ray photoelectron spectroscopy 0103 physical sciences Reactivity (chemistry) Thin film 0210 nano-technology Silicon oxide Deposition (chemistry) Carbon |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 36:021509 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | Different precursors for atomic layer deposition of carbon doped silicon oxide have been investigated. The impact of precursor reactivity, the number of silicon-carbon bonds in the precursor, oxidant concentration and dosing time, and deposition temperature on deposited film's carbon content are discussed. It is found that substituting the Si-H by Si-CH3 reduces precursor reactivity and decreases film growth per cycle (GPC). At temperatures higher than 225 °C, all the precursors could deposit a silicon oxide films with reasonable GPC but with very little carbon in the film ( |
| Databáze: | OpenAIRE |
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