The correct account of nonzero differential conductance in the saturation regime in the MOSFET compact model

Autor:	Valentin O. Turin, Sergey Makarov, Benjamin Iniguez, Michael Shur, Gennady I. Zebrev
Rok vydání:	2014
Předmět:	Basis (linear algebra) Mathematical analysis Transistor Value (computer science) Monotonic function Computer Science Applications law.invention Simple (abstract algebra) law Control theory Modeling and Simulation MOSFET Electronic design automation Electrical and Electronic Engineering Saturation (chemistry) Mathematics
Zdroj:	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 27:863-874
ISSN:	0894-3370
Popis:	We suggest a simple and versatile approach for the correct account of differential conductance in the saturation regime that provides a monotonic decrease of the differential conductance from its maximum value to its minimum positive or even negative value. We present all equations also in normalized form, which simplifies the analysis and usage of the approach. On the basis of the suggested approach, we have developed 'internal' does not include source and drain resistance metal-oxide-semiconductor field-effect transistor compact model and have incorporated one into an Electronic Design Automation software Symica as Verilog-A module. Copyright © 2014 John Wiley & Sons, Ltd.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::79710d0b1a53a76e3a4863087c62b09d https://doi.org/10.1002/jnm.1969 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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