Removing Defects: Healing Single Vacancy Defects

Autor:	Holly Alexandra Tetlow
Rok vydání:	2017
Předmět:	Electron mobility Molecular dynamics Materials science Graphene law Chemical physics Vacancy defect Molecule Epitaxial graphene Deposition (law) Electronic properties law.invention
Zdroj:	Theoretical Modeling of Epitaxial Graphene Growth on the Ir(111) Surface ISBN: 9783319659718
DOI:	10.1007/978-3-319-65972-5_7
Popis:	During epitaxial graphene growth vacancy defects may be formed in the graphene structure. These defects are undesirable since they affect the electronic properties of the graphene and reduce the carrier mobility [1]. However it was shown that it is possible for vacancy defects to heal once they are produced in the case of graphene grown on the Ir(111) surface, if the system is dosed with ethylene molecules as in CVD growth [2]. In this chapter the healing of graphene single vacancy defects via the deposition of ethylene molecules will be investigated with the use of molecular dynamics simulations and nudged elastic band calculations.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::767b0c97710384f3a3c8aff026eb8cd5 https://doi.org/10.1007/978-3-319-65972-5_7 Zobrazit plný text záznamu