Analysis of refractive index profile in a silicon ion-implanted KTiOPO4 waveguide
| Autor: | Bo-Rong Shi, X. S. Wang, Ding-Yu Shen, Feng Chen, Qingming Lu, Nie Rui, Ke-Ming Wang |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Mechanical Engineering Physics::Optics chemistry.chemical_element Refractive index profile Condensed Matter Physics Waveguide (optics) Ion Crystal Optics Ion implantation chemistry Mechanics of Materials General Materials Science business Step-index profile Refractive index |
| Zdroj: | Materials Letters. 57:1197-1201 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/s0167-577x(02)00957-6 |
| Popis: | The Si+ ion-implanted KTiOPO4 optical waveguide was reported. The 3.0 MeV Si+ ions at a dose of 2×1015 ions/cm2 were implanted into the KTiOPO4 crystal at room temperature to form a waveguide structure with a thickness of more than 2 μm. The prism-coupling method was carried out to measure the effective refractive indices of the waveguide dark modes. The refractive index profile was reconstructed using reflectivity calculation method (RCM). The TRIM 98 (transport of ions in matter) code was applied for simulating the process of the ion implantation, which was believed to be helpful to a better understanding of the waveguide formation. |
| Databáze: | OpenAIRE |
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