The thermal dissociation of decaborane on Si(111)‐(7×7) and doping effects in the near surface region

Autor:	M. L. Colaianni, P. J. Chen, J. T. Yates
Rok vydání:	1992
Předmět:	chemistry.chemical_compound Adsorption Silicon Chemistry Thermal desorption spectroscopy Desorption Decaborane Thermal decomposition Analytical chemistry Thermal desorption General Physics and Astronomy chemistry.chemical_element Boron
Zdroj:	Journal of Applied Physics. 72:3155-3160
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.351477
Popis:	The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)‐(7×7) has been investigated by surface spectroscopies. Upon adsorption between 100 and 300 K, molecular decaborane was identified on the surface by high‐resolution electron‐energy‐loss spectroscopy (HREELS) by the absence of Si‐H surface species production. The thermal decomposition of adsorbed decaborane molecules at higher temperatures involves a preferential removal of hydrogen from the weaker B—H—B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300 and 900 K. Clean boron deposition on the surface was achieved at ∼900 K. Upon heating to ∼1275 K, extensive boron diffusion into bulk silicon produced a highly B‐doped region below the surface (∼103 A) with a carrier hole concentration on the order of ∼1019 cm−3 depending upon the initial surface boron coverage and annealing conditions. The surface adopted a (√3×√3)R30° reconstruction with a nominal 1/3 ML boron occupying subsurface subs...
Databáze:	OpenAIRE
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