Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition
| Autor: | Seung Min Lee, Jungwoo Oh, Christopher W. Bielawski, Yoonseo Jang, Eric S. Larsen, Jung Hwan Yum, Do Hwan Jung |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Beryllium oxide Band gap Nucleation Analytical chemistry 02 engineering and technology Substrate (electronics) Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound Atomic layer deposition chemistry X-ray photoelectron spectroscopy 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Thin film 0210 nano-technology |
| Zdroj: | Solid-State Electronics. 163:107661 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2019.107661 |
| Popis: | Beryllium oxide (BeO) thin films were grown on a p-type Si substrate by plasma enhanced atomic layer deposition (PEALD) using diethylberyllium as a precursor and O2 plasma. The PEALD BeO exhibited self-saturation and linear growth rates. The dielectric properties of PEALD were compared with those of thermal atomic layer deposition (ThALD). X-ray photoelectron spectroscopy was performed to determine the bandgap energy of PEALD BeO (8.0 eV) and ThALD BeO (7.9 eV). Capacitance–voltage curves revealed that PEALD BeO had low hysteresis and frequency dispersion compared to ThALD BeO. In addition, PEALD showed a dielectric constant of 7.15 (at 1 MHz) and low leakage current ( 7.25 × 10 - 9 A/cm2 at −1 MV/cm). These results indicate that the highly activated radicals from oxygen plasma prompt the chemical reaction at the substrate, thus reducing nucleation delay and interface trap density. |
| Databáze: | OpenAIRE |
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