Nitride-Based LEDs With Phosphoric Acid Etched Undercut Sidewalls
| Autor: | Tsun-Kai Ko, Der-Ming Kuo, Shoou-Jinn Chang, C. F. Shen, S.C. Hung, Schang-Jing Hon |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Gallium nitride Nitride Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Etching (microfabrication) law Silicon carbide Optoelectronics Undercut Electrical and Electronic Engineering business Phosphoric acid Light-emitting diode |
| Zdroj: | IEEE Photonics Technology Letters. 21:510-512 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | We propose a simple defect-selective wet etching method to form oblique sidewalls for GaN-based epitaxial layers with phosphoric acid. Using the same defect-selective wet etching, we also prepared GaN-based light-emitting diodes (LEDs) with undercut sidewalls. Compared with conventional LEDs with vertical sidewalls, it was found that output intensity of the LEDs prepared by defect-selective wet etching was 30% higher. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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