Development of a 60 $\mu{\rm m}$ Deep Trench and Refill Process for Manufacturing Si-Based High-Voltage Super-Junction Structures
| Autor: | H. Bartolf, Iulian Nistor, Michael Jurisch, Martin Zimmermann, Andrei Mihaila, Bernd Leibold |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Engineering
Dopant business.industry Deep trench Nanotechnology High voltage Scanning capacitance microscopy Condensed Matter Physics Epitaxy Industrial and Manufacturing Engineering Secondary electrons Electronic Optical and Magnetic Materials Homogeneity (physics) Trench Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Semiconductor Manufacturing. 26:529-541 |
| ISSN: | 1558-2345 0894-6507 |
| DOI: | 10.1109/tsm.2013.2272042 |
| Popis: | A unique and novel, 60 μm deep trench and refill process for manufacturing Si-based Super-Junction device structures for high-voltage applications beyond 600 V is discussed on the following pages. We combine an etching-process with a DCS-HCl epitaxial growth method to achieve a homogenous refilling of the generated deep-trench structures with oppositely charged dopants. Utilizing numerical process simulations, we demonstrate the advantage of the trench and refill technological approach as compared to the more established multiple-epitaxy and implantation manufacturing method. In order to experimentally validate the homogeneity of our refilling procedure, we perform secondary electron potential contrast as well as nanoscaled scanning capacitance microscopy measurements on our fabricated micro-structures. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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