Transferring Few-Layer Graphene Sheets on Hexagonal Boron Nitride Substrates for Fabrication of Graphene Devices

Autor:	M. A. P. da Silva, J. A. Leon, G. M. Gusev, N. C. Mamani, A. Rahim, L. E. Gomez
Rok vydání:	2014
Předmět:	Materials science Silicon Graphene Graphene foam chemistry.chemical_element Nanotechnology Substrate (electronics) law.invention chemistry.chemical_compound chemistry law Boron nitride Bilayer graphene Graphene nanoribbons Graphene oxide paper
Zdroj:	Graphene. :25-35
ISSN:	2169-3471 2169-3439
DOI:	10.4236/graphene.2014.33005
Popis:	We have developed a dry transfer method that allows graphene to be transferred from polymer- thyl-methacrylate (PMMA)/Si (silicon) substrates on commercially available hexagonal boron ni- tride (hBN) crystals. With this method we are able to fabricate graphene devices with little wrin- kles and bubbles in graphene sheets, but that do not degrade the electronic quality more than the SiO2 substrate does. For hBN to perform the function described above substrate cleanliness is critical to get high quality graphene devices. Using hBN as a substrate, graphene exhibits enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping compared to graphene on SiO2 substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73d85cfd04d6c55e19edfc9d29c511c1 https://doi.org/10.4236/graphene.2014.33005 Zobrazit plný text záznamu