| Autor: |
Prantik Mahajan, Robert Gauthier, Kyong Jin Hwang, Aloysius Priartanto Herlambang |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 43rd Annual EOS/ESD Symposium (EOS/ESD). |
| DOI: |
10.23919/eos/esd52038.2021.9574729 |
| Popis: |
An area-efficient novel Buried Floating PESD-doped (BFP) NPN-embedded Silicon-Controlled Rectifier (NPN-eSCR) device was evaluated for robust High Voltage (HV) Electrostatic Discharge (ESD) protection in a 130nm GLOBALFOUNDRIES® low-cost BCDLite process. The BFP NPN-eSCR exhibited a unique physical mechanism of device operation (parasitic PNPNPN action with series connected V-SCR and V-NPN). The mechanism was established through Technology Computer-Aided Design (TCAD) simulations and validated with silicon measured Transmission Line Pulse (TLP) results. Best-In-Class (BIC) device performance with high failure current (It2~87.44mA/um), high holding voltage (Vh>12V) and optimized device footprint (square layout - each emitter edge ~30um) are reported as the key Figures of Merit (FOMs). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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