SEGR and PIGS Failure Analysis of SiC Mosfet

Autor:	E. Vitanza, S. Massett, Vincenzo Cantarella, Francesco Pintacuda, Michele Muschitiello
Rok vydání:	2019
Předmět:	Materials science stomatognathic system Nuclear engineering MOSFET Paper report Hot spot (veterinary medicine)
Zdroj:	2019 European Space Power Conference (ESPC).
DOI:	10.1109/espc.2019.8931999
Popis:	This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::731e09a76fe84f990da8befa3110b862 https://doi.org/10.1109/espc.2019.8931999 Zobrazit plný text záznamu