Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Autor:	V. B. Shmagin, A. V. Murel, E. A. Surovegina, V. L. Krukov, V. I. Shashkin, S. S. Strelchenko
Rok vydání:	2017
Předmět:	Materials science Doping Analytical chemistry Capacitance spectroscopy Conductivity Condensed Matter Physics Epitaxy Acceptor Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound chemistry Recombination Diode
Zdroj:	Semiconductors. 51:1485-1489
ISSN:	1090-6479 1063-7826
Popis:	Three deep acceptor levels with activation energies of ~0.7, ~0.41, and ~0.16 eV are found in GaAs structures, which have the hole type of conductivity and are grown by liquid-phase epitaxy, by the methods of capacitance spectroscopy (admittance spectroscopy and deep-level transient spectroscopy). The first two levels are known as HL2 and HL5 and are related to the features of GaAs-layer growth by liquid-phase epitaxy. They are effective recombination centers determining reverse currents in p–i–n diodes, which is confirmed by studying the temperature dependences of reverse currents. The level with the energy Ev + 0.16 eV can be related to the two-charge acceptor level of the inherent antisite defect in GaAs, which also determines the doping concentration of structures in the singly charged state.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::73198423fec29b0a8f25b51621295fcf https://doi.org/10.1134/s1063782617110197 Zobrazit plný text záznamu Plný text ve formátu PDF