Photoluminescence from GaN films grown by MBE on an substrate
| Autor: | J.W. Orton, A. V. Andrianov, Tin S. Cheng, J.F.H. Nicholls, D.E. Lacklison, K.P. O'Donnell, C. T. Foxon |
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| Rok vydání: | 1997 |
| Předmět: |
Materials science
Photoluminescence business.industry Exciton Binding energy Analytical chemistry Gallium nitride Substrate (electronics) Condensed Matter Physics Epitaxy Acceptor Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Materials Chemistry Optoelectronics Electrical and Electronic Engineering Thin film business |
| Zdroj: | Semiconductor Science and Technology. 12:59-63 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | GaN films were grown by the MBE method on substrates. Photoluminescence (PL) of the epitaxial films has been studied to characterize the films ex situ. The room-temperature PL spectrum contains an edge PL band and also a broad band of deep-level emission at 2.6 eV. This deep-level emission becomes very small in comparison with the edge emission at helium temperatures. Analysis of the low-temperature data suggests that the films contain both hexagonal and cubic crystallites. The main PL lines at 5.7 K are due to emission of excitons bound on neutral donors in hexagonal and cubic phases of the epitaxial film (3.472 eV and 3.263 eV), D - A pair recombination (3.154 eV) and also free electron - neutral acceptor transition (3.185 eV) in c-GaN. The involved acceptor has a binding energy of about 115 meV. |
| Databáze: | OpenAIRE |
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