Kinetically stabilized high-temperature InN growth
| Autor: | Daniel Gebregiorgis, Sidong Lei, G. Brendan Cross, Daniel Seidlitz, Nikolaus Dietz, Daniel M. Deocampo, Alexander Kozhanov, Mark Vernon, Zaheer Ahmad |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Indium nitride Thermal decomposition Analytical chemistry 02 engineering and technology Chemical vapor deposition Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry symbols.namesake chemistry.chemical_compound chemistry 0103 physical sciences Materials Chemistry symbols Sapphire Crystallite Metalorganic vapour phase epitaxy 0210 nano-technology Raman spectroscopy |
| Zdroj: | Journal of Crystal Growth. 536:125574 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2020.125574 |
| Popis: | We report on indium nitride growth on sapphire substrates by migration-enhanced plasma-assisted metal organic chemical vapor deposition (MEPA-MOCVD). The growth is studied in the temperature range from 700 °C to 957 °C, well above the decomposition temperature of indium nitride in conventional MOCVD. Raman spectroscopy, atomic force microscopy, and X-ray diffraction indicate polycrystalline grainy InN film growth. |
| Databáze: | OpenAIRE |
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